Integration of MOCVD TiSiN barrier metal with low-k dielectric layer (k=2.9) has been successfully demonstrated for 65 nm technology. By eliminating TiSiN barrier at via bottom prior to Cu via formation using Direct Contact Via (DCV) process, electromigration (EM) reliability of the TiSiN barrier was found to be substantially improved. Also, a significant reduction of 0.1 um via/line resistances is achieved. The proposed integration method allows MOCVD TiSiN barrier usable for nano interconnect, being able to take advantage of high throughput and excellent step coverage of MOCVD process.