Abstract:The role of hot-carrier-induced interface states in NMOSFETs is discussed. A new model is proposed based on measurements in several 0.7/~m CMOS technologies of different suppliers. Our model for the first time enables accurate interface state prediction over many orders of magnitude in time for all stress conditions under pinch-off and incorporates saturation. It can easily be implemented in a reliability circuit simulator, enabling more accurate NMOSFET parameter degradation calculations (e.g. AIo, Agm etc.).