The thickness of a low-temperature silicon (LT-Si) buffer layer has been found to affect the growth of a SiGe overlayer significantly. 300-nm-thick Si0.7Ge0.3 films were grown on 50- to 300-nm-thick LT-Si buffer layers at 450 °C by solid-source molecular beam epitaxy. The threading dislocation density was found to decrease with the thickness of the LT-Si buffer in the thickness range of 50–200 nm. The density remains at the same low level when the thickness was increased from 200 to 300 nm. A relatively dense misfit dislocation network was observed to form at the SiGe/Si interface in samples with the LT-Si buffer layer thickness exceeding 200 nm. It is suggested that the presence of more point defects in the thicker LT-Si buffer layer is more effective to block the propagation of threading dislocations.
The effect of temperature on the evolution of loops in nickel was investigated under 30 keV He+ irradiation. The size, Burgers vector, and nature of loops were analyzed by a transmission electron microscope (TEM). In addition, the Weibull statistical analysis was introduced to analyze the size distributions of the loops. The TEM results indicate that the sizes of loops increase with increasing irradiation temperature, where they are mainly in the range of 10–30, 20–50, and 30–80 nm at 300, 400, and 500 °C, respectively. In the irradiation temperature range of 300–500 °C, the size distributions of loops fit Weibull distribution very well, which suggests that the loops tend to grow larger and/or be merged. In addition, almost all the loops formed under He+ irradiation are the interstitial loops with Burgers vectors b = a2⟨110⟩, which is ascribed to the assistance of the He atom on the formation process of loops.
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