The anisotropic etching behavior of single-crystal silicon and the behavior of SiO2 and Si3N4 in an ethylenediaminebased solution as well as in aqueous KOH, NaOH, and LiOH were studied. The crystal planes bounding the etch front and their etch rates were determined as a function of temperature, crystal orientation, and etchant composition. A correlation was found between the etch rates and their activation energies, with slowly etching crystal surfaces exhibiting higher activation energies and vice versa. For highly concentrated KOH solutions, a decrease of the etch rate with the fourth power of the water concentration was observed. Based on these results, an electrochemical model is proposed, describing the anisotropic etching behavior of silicon in all alkaline solutions. In an oxidation step, four hydroxide ions react with one surface silicon atom, leading to the injection of four electrons into the conduction band. These electrons stay localized near the crystal surface due to the presence of a space charge layer. The reaction is accompanied by the breaking of the backbonds, which requires the thermal excitation of the respective surface state electrons into the conduction band. This step is considered to be rate limiting. In a reduction step, the injected electrons react with water molecules to form new hydroxide ions and hydrogen. It is assumed that these hydroxide ions generated at the silicon surface are consumed in the oxidation reaction rather than those from the bulk electrolyte, since the latter are kept away from the crystal by the repellent force of the negative surface charge. According to this model, monosilicic acid Si(OH)4 is formed as the primary dissolution product in all anisotropic silicon etchants. The anisotropic behavior is due to small differences of the energy levels of the backbond surface states as a function of the crystal orientation.

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The etching behavior of highly boron doped silicon in aqueous solutions based of ethylenediamine, KOH, NaOH, and LiOH was studied. For all etchants, a strong reduction of the etch rate for boron concentrations exceeding approximately 2 9 10 ~9 cm -3 was observed. This value is in good agreement with published data for the onset of degeneracy of p-type silicon. The reduction of the etch rate was found to be inversely proportional to the fourth power of the boron concentration.

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Homogeneous nucleation rates are determined for micrometer sized water droplets levitated inside an electrodynamic Paul-trap. The size of a single droplet is continuously measured by analyzing the angle-resolved light scattering pattern of the droplets with classical Mie theory. The freezing process is detected by a pronounced increase in the depolarization of the scattered light. By statistical analysis of the freezing process of some thousand individual droplets, we obtained the homogeneous nucleation rate of water between 236 and 237 K. The values are in agreement with former expansion cloud chamber measurements but could be determined with considerably higher precision. The measurements are discussed in the light of classical nucleation theory in order to obtain the size and the formation energy of the critical nucleus.

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Rates of homogeneous nucleation of H2O droplets in a temperature range from 236.37 to 237.91 K and of D2O droplets from 241.34 to 242.33 K were measured. The single microdroplets consisted of pure H2O or D2O and were levitated in an electrodynamic balance. In comparison to H2O, D2O shows a stronger tendency to nucleate. Over the investigated temperature interval, D2O droplets need to be supercooled less by 1.1 K compared to H2O droplets in order to arrive at the same nucleation rate. This is in good agreement with the higher degree of intermolecular association in liquid D2O, a fact which has been well established previously both from theory and experimental studies.