The authors report on a detailed Raman study of N–In codoped p-type ZnO thin films with the hole density ranging from 7.30×1016to2.30×1018cm−3. In addition to the identification of E2(high) modes of ZnO and InN at ∼434 and ∼488cm−1, respectively, clear coupled longitudinal-optical phonon-hole-plasmon modes have been observed. A theoretical analysis combining the deformation potential and electro-optic mechanisms can well reproduce the line shapes of the coupled modes, where the yielded hole densities and mobilities are found to be in good agreement with the data from Hall measurements.
A combination study of structural, optical, and electrical properties has been carried out on N–In codoped p-type ZnO thin films for the origins of shallow level and hole mobility. The observed small activation energy of ∼20meV for the hole concentration corresponds well to the results from photoluminescence and conductivity data, revealing the grain boundary trapping nature of the shallow level. The achieved hole mobility is mainly due to the lack of grain boundary barrier effect, and the codoping yielded weak ionized impurity scattering. The authors have also revealed the scattering and conduction mechanisms in these p-ZnO films.
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