Effects of thermal annealing on the structural, electrical and optical properties of transparent semiconducting Zn 2 SnO 4 (ZTO) thin films have been investigated. The ZTO thin film with the thickness of about 100 nm is prepared by the RF-magnetron sputtering technique using powder target. The experimental results show that the ZTO films annealed at above 400 • C possess inverse cubic spinel structure with a preferred grain orientation in the (311) direction. The transmittances of the ZTO films are approximately 80% in visible region regardless annealing temperature. The increasing annealing temperature leads to the increase in Hall mobility and electron concentration, resulting in the decrease of resistivity. The optical band gap of the films increases with the increase of annealing temperature.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.