초 록5 nm의 중형기공(mesopore)을 지녔으며 5~7 nm 굵기의 산화주석(SnO 2 ) 나노선 다발이 잘 정렬된 meso-SnO 2 를 주형합성법을 이용해서 제조하였다. 또한 주형합성법을 변형시켜서 5~7 nm 굵기의 동 일한 나노선 다발 사이에 존재하는 중형기공에 주형으로 사용되었던 실리카(SiO 2 )를 일부 남긴 meso-SnO 2 와 실리카의 복합체인 meso-SnO 2 /SiO 2 도 제조하였다. X-선 회절, 질소흡착법, 투과전자현 미경을 이용해서 meso-SnO 2 와 meso-SnO 2 /SiO 2 의 구조를 확인하였다. meso-SnO 2 /SiO 2 는 mesoSnO 2 에 비해서 충방전시 발생하는 부피 팽창을 완화할 수 있을 것으로 예측했으며, 순환전압전류곡 선, 교류 임피던스 분석, 충방전 전압 Profile 변화를 통해 부피 팽창 완화 효과를 확인하였다. 하지 만, 수명 특성 측면에서는 구조 제어 효과가 미비하여, 향후 이를 개선하는 연구가 진행되어야 한다.Abstract : Mesoporous tin oxide (meso-SnO 2 ) with 5 nm mesopore and well-aligned SnO 2 nanowire-bundles with 5~7 nm diameters were prepared by template synthesis method. In addition to meso-SnO 2 , meso-SnO 2 /SiO 2 , which has almost the same structure as meso-SnO 2 including SiO 2 used as the template were prepared by the modification of template synthesis. X-ray diffraction, N 2 adsorption-desorption isotherms, transmission electron microscopy observed structures of meso-SnO 2 and meso-SnO 2 /SiO 2 . Although the meso-SnO 2 /SiO 2 showed some positive evidences to suppress the volume change of meso-SnO 2 through cyclic voltammogram, electrochemical impedance spectroscopy, and voltage profiles during cycling, its cycle life was not improved highly to address modified structural effects. Thus, further study might be done to control the nanostructure of meso-SnO 2 /SiO 2 for enhanced cycle performance.
The thermal behavior of silicon nanoparticles (Si NPs) was investigated for the preparation of silicon thin film using a solution process. TEM analysis of Si NPs, synthesized by inductively coupled plasma, revealed that the micro-structure of the Si NPs was amorphous and that the Si NPs had melted and merged at a comparatively low temperature (~750 °C) considering bulk melting temperature of silicon (1414 °C). A silicon ink solution was prepared by dispersing amorphous Si NPs in propylene glycol (PG). It was then coated onto a silicon wafer and a quartz plate to form a thin film. These films were annealed in a vacuum or in an N₂ environment to increase their film density. N2 annealing at 800 °C and 1000 °C induced the crystallization of the amorphous thin film. An elemental analysis by the SIMS depth profile showed that N₂annealing at 1000 °C for 180 min drastically reduced the concentrations of carbon and oxygen inside the silicon thin film. These results indicate that silicon ink prepared using amorphous Si NPs in PG can serve as a proper means of preparing silicon thin film via solution process.
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