In
this work, we demonstrate a new concept for all oxide-based transparent
photodetector by employing photoinduced pyroelectric effect. Particularly,
a combination of n-type ZnO and p-type NiO heterostructure is used
to design a red light-driven transparent photodetector. The device
shows a high transmittance (>75%) and very low absorbance in the
visible region. An open-circuit voltage of 1.8 V was measured across
the detector with the pulsed light illumination (λ = 650 nm,
7 mW cm–2), which is attributed to the photoinduced
pyroelectric effect. The thermometry images confirmed an increment
in the surface temperature from 22.9 to 25 °C due to the illumination
of pulsed 650 nm. The peak duration corresponding to pyrophototronic
effect was 40 μs. This study will open a new avenue to design
future advanced transparent optoelectronics devices, including solar
cell, photodetectors, and transparent windows.
In this work, a strain modulated highly transparent and flexible ZnO/Ag‐nanowires/polyethylene terephthalate optoelectronic device is developed. By utilizing the applied external strain‐induced piezophototronic effects of a ZnO thin film, a UV‐generated photocurrent is tuned in a wide range starting from 0.01 to 85.07 µA and it is presented in a comprehensive map. Particularly, the performance of the device is effectively enhanced 7733 times by compressive strain, as compared to its dark current in a strain‐free state. The observed results are explained quantitatively based on the modulation of oxygen desorption/absorption on the ZnO surface under the influence of applied strains. The presented simple optoelectronic device can be easily integrated into existing planar structures, with potential applications in highly transparent smart windows, wearable electronics, smartphones, security communication, and so on.
The enhancement of the optical and electrical properties of TCO films was investigated by depositing different layers of AZO (100 nm), Ag (5 nm)/AZO (95 nm), and ITO (45 nm)/Ag (5 nm)/AZO (50 nm) upon n-Si substrate at room temperature by magnetron sputtering method. The ITO/Ag/AZO device efficiently improved the electrical and optical properties with the low sheet resistance of 2.847 Ω/sq. and an increase in the rectification ratio of 455.60% when compared with AZO and Ag/AZO devices. The combination of ITO/Ag/AZO provided the optimum results in all the electrical and optical properties. These results showed that within the optimized thickness range of 100 nm, compared to AZO and Ag/AZO, ITO/Ag/AZO device showed the improvement for both optical and electrical properties at room temperature.
A high-performance silicon UV photodetector was achieved by using a hybrid of a film with nanowires. Electrically conductive and optically transparent indium-tin oxide (ITO) was deposited to form an ITO film or ITO nanowire (NW) on a Si substrate, resulting in a heterojunction. The ITO-film device is stable with a low-leakage current. Meanwhile, the ITO NWs demonstrated an excellent capability to collect photogenerated carriers. The hybrid ITO (NWs on a film)/Si photodetector demonstrates a fast UV reactive time of 1.6 ms among Si-based photodetectors. We may find a means of enhancing the photoelectric performance capabilities of devices beyond the limits of conventional Si via the adoption of functional designs. Moreover, the use of a homogeneous material for the structuring of films and nanowires would offer a remarkable advantage by reducing both the number of fabrication steps and the cost.
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