Glass fiber reinforced polymer (GFRP) is a widely used composite material in industrial production. In this article, glass fiber (GF) was fluorinated by dielectric barrier discharge (DBD), and the GFRP composites made of GF with different fluorination time and various numbers of fluorinated GF layers were prepared to improve the surface insulation property. The effect of plasma fluorination on GF was analyzed by scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS), including the surface morphology and chemical composition. In addition, the surface electrical properties of the above composites were investigated experimentally. The results show that the flashover voltage of modified GFRP is 29.84% higher than that of the original sample. By analyzing the charge dissipation and trap, it is inferred that plasma fluorination can raise the trap energy level of the composites, therefore suppressing the carrier migration on the surface and increasing the flashover voltage. Furthermore, the internal structure of composites can be improved by increasing the number of fluorinated GF layers, which accelerates the charge dissipation along the body, thus enhancing the surface insulation properties of the composites in both ways.
With the increase of voltage level, the surface flashover of epoxy composite insulation material becomes an important issue, which restricts the development of UHV (Ultra High Voltage) transmission technology. In this article, a method of using SiC skeleton to construct charge channel was proposed, which can enhance the surface insulation performance of epoxy composite. In addition, we investigated the influence of SiC skeleton structure on charge dissipation and flashover voltage. At the same time, we explored the synergistic influence mechanism of SiC and Al 2 O 3 nanofillers and SiC skeleton on the surface flashover characteristics of epoxy resin. The results showed that the SiC skeleton effectively enhances the surface insulation performance of epoxy resin. When Al 2 O 3 nanofiller and SiC skeleton act simultaneously, the flashover voltage enhancement reached 13.65%. Combining with finite element simulation, the flashover voltage enhancement mechanism of epoxy resin after modified by nanofiller-skeleton method was analyzed. It showed that the internal charge channel formed by the SiC skeleton plays an important role in suppressing the local field distortion. The results of the study provided a new idea for modifying epoxy composite to improve the flashover voltage.
The flashover and dampness on the surface of epoxy resin (ER) composites are two critical factors leading to the failure of high voltage direct current (HVDC) insulating devices. Designing and constructing a surface structure with high insulating and hydrophobic performance is an effective way to solve these problems. In this paper, we prepared fluorinated silica nanoparticles (F‐SiO2) using a combination of dielectric barrier discharge (DBD) plasma and 1H,1H,2H,2H‐Perfluorodecyltrimethoxysilane (FAS‐17). The resulting low‐surface‐energy F‐SiO2 self‐assembled on the surface of ER to form a thin layer structure. Our results demonstrate a significant improvement in both the surface flashover voltage and hydrophobicity of ER composites with the self‐assembly structure. The maximum surface flashover voltage is increased by 35.73% to 12.08 kV, and the maximum water contact angle reaches superhydrophobicity at 155.5 ± 3°. The improvements in flashover voltage are attributed to changes in trap energy level and surface roughness. At the same time, the superhydrophobicity is due to the low‐surface‐energy characteristics and micro‐nano structure of the self‐assembly structure. This study provides a promising approach for synergistically improving flashover voltage and hydrophobicity of insulating materials.
The surface flashover of epoxy resin (EP) composites is a pivotal problem in the field of high-voltage insulation. The regulation of the interface between filler and matrix is an effective means to suppress flashover. In this paper, nano ZnO was fluorinated and grafted by low-temperature plasma technology, and the fluorinated filler was doped into epoxy resin to study the DC surface flashover performance of the composite. The results show that plasma fluorination can effectively inhibit the agglomeration by grafting -CFx groups onto the surface of nano ZnO particles. The fluorine containing groups at the interface provide higher charge binding traps and enhance the insulation strength at the interface. At the same time, the interface bond cooperation brought by plasma treatment also promoted the accelerating effect of nano ZnO on charge dissipation. The two effects synergistically improve the surface flashover performance of epoxy composites. When the concentration of fluorinated ZnO filler is 20%, the flashover voltage increases the highest, which is 31.52% higher than that of pure EP. In addition, fluorinated ZnO can effectively reduce the dielectric constant and dielectric loss of epoxy composites. The interface interaction mechanism was further analyzed by molecular dynamics (MD) simulation and density functional theory (DFT) simulation.
With the extensive application of glass fiber reinforced polymer (GFRP) in the field of high voltage insulation, its operating environment is becoming more and more complex, and the surface insulation failure has gradually become a pivotal problem affecting the safety of equipment. In this paper, nano-SiO2 was fluorinated by Dielectric barrier discharges (DBD) plasma and doped with GFRP to enhance the insulation performance. Through Fourier Transform Ioncyclotron Resonance (FTIR) and X-ray Photoelectron Spectroscopy (XPS) characterization of nano fillers before and after modification, it was found that plasma fluorination can graft a large number of fluorinated groups on the surface of SiO2. The introduction of fluorinated SiO2 (FSiO2) can significantly enhance the interfacial bonding strength of the fiber, matrix and filler in GFRP. The DC surface flashover voltage of modified GFRP was further tested. The results show that both SiO2 and FSiO2 can improve the flashover voltage of GFRP. When the concentration of FSiO2 is 3%, the flashover voltage increases most significantly to 14.71 kV, which is 38.77% higher than that of unmodified GFRP. The charge dissipation test results show that the addition of FSiO2 can inhibit the surface charge migration. By the calculation of Density functional theory (DFT) and charge trap, it is found that grafting fluorine-containing groups on SiO2 can increase its band gap and enhance its electron binding ability. Furthermore, a large number of deep trap levels are introduced into the nanointerface inside GFRP to enhance the inhibition of secondary electron collapse, thus increasing the flashover voltage.
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