Corrugated metal surface with underlayer metal as ground is designed as spoof surface plasmons polaritons (SSPPs) structure in microwave frequencies. Efficient conversion from guided wave to SSPP is required for energy feeding into and signal extracting from such plasmonic structure. In this paper, first a high efficient transition design is presented by using gradient corrugated strip with underlayer metal as ground and by using the impedance matching theory. The SSPP wave is highly confined within the teeth part of the corrugated surface. By using this characteristic, then the simple wire-based metamaterial is added below the strip to manipulate the SSPP wave within the propagating band. Two aforementioned devices are designed and fabricated. The simulated and measured results on the scattering coefficients demonstrate the excellent conversion and excellent manipulating of SSPP transmitting. Such results have very important value to develop advanced plasmonic integrated circuits in the microwave frequencies.
A new scalable small-signal model for 0.1 μm AlGaN/ GaN HEMT up to 110 GHz is presented in this paper. The taps between the gate/drain manifold and fingers on the device has been investigated and included in the equivalent circuit. In addition, to ensure high scalability, a set of scaling rules are presented. A novel extraction procedure for extrinsic capacitances using full-wave electromagnetic (FW-EM) method has been introduced along with corresponding structures used for EM simulation. The nonlinear dependence of the extrinsic inductances on the gate-width has been accounted for by a new scaling rule, which can be used to extract their value from measurement data. To guarantee the stability of the scaling coefficients, two devices with different gate-width have been utilized for their generation. The proposed scalable model has been verified using 0.1 μm AlGaN/GaN HEMT devices with different gate-widths and different gate-fingers. The experiment results show good agreement between model and measurement S-parameters up to 110 GHz.
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