The
intriguing properties of graphene have inspired the pursuit
of two-dimensional materials with honeycomb structure. Here we achieved
the synthesis of a monolayer transition-metal monochalcogenide AgTe
on Ag(111) by tellurization of the substrate. High-resolution scanning
tunneling microscopy, combined with low-energy electron diffraction,
angle-resolved photoemission spectroscopy, and density functional
theory calculations, demonstrates the planar honeycomb structure of
AgTe. The first-principles calculations further predict that, protected
by the in-plane mirror reflection symmetry, there are two Dirac node-line
fermions existing in the free-standing AgTe when spin–orbit
coupling (SOC) is ignored. In fact, the SOC leads to the gap opening,
resulting in the emergence of the topologically nontrivial quantum
spin Hall edge state. Importantly, our experiments evidence the chemical
stability of the monolayer AgTe in ambient conditions, making it possible
to study AgTe by more ex situ measurements and even to utilize AgTe
in future electronic devices.
Two-dimensional (2D) in-plane p-n junctions with a continuous interface have great potential in next-generation devices. To date, the general fabrication strategies rely on lateral epitaxial growth of p- and n-type 2D semiconductors. An in-plane p-n junction is fabricated with homogeneous monolayer Te at the step edge on graphene/6H-SiC(0001). Scanning tunneling spectroscopy reveals that Te on the terrace of trilayer graphene is p-type, and it is n-type on monolayer graphene. Atomic-resolution images demonstrate the continuous lattice of the junction, and mappings of the electronic states visualize the type-II band bending across the space-charge region of 6.2 nm with a build-in field of 4 × 10 V cm . The reported strategy can be extended to other 2D semiconductors on patternable substrates for designed fabrication of in-plane junctions.
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