We propose a planar metamaterial formed by four-strip metallic resonators, which can achieve high-Q Fano resonance in terahertz regime. This terahertz planar metamaterial supports a sharp Fano resonance at 0.81 THz with 25% transmission. The resonance bandwidth of the dip is 0.014 THz with the Q-factor of 58. The interference between the bright mode and dark mode leads to the Fano line shape. This sharp Fano profile is explained by the electromagnetic theory of Fano resonance. Moreover, multiple Fano resonances can be realized by adding more strips into the original structure. As an example, two Fano dips with Q-factors of 61 and 65 can be achieved via a five-strip structure.Electronic supplementary materialThe online version of this article (10.1186/s11671-018-2677-0) contains supplementary material, which is available to authorized users.

Additive manufacturing (AM) technology is considered one of the most promising manufacturing technologies in the aerospace and defense industries. However, AM components are known to have various internal defects, such as powder agglomeration, balling, porosity, internal cracks and thermal/internal stress, which can significantly affect the quality, mechanical properties and safety of final parts. Therefore, defect inspection methods are important for reducing manufactured defects and improving the surface quality and mechanical properties of AM components. This paper describes defect inspection technologies and their applications in AM processes. The architecture of defects in AM processes is reviewed. Traditional defect detection technology and the surface defect detection methods based on deep learning are summarized, and future aspects are suggested.

Quad-band terahertz absorber with single-sized metamaterial design formed by a perforated rectangular resonator on a gold substrate with a dielectric gap in between is investigated. The designed metamaterial structure enables four absorption peaks, of which the first three peaks have large absorption coefficient while the last peak possesses a high Q (quality factor) value of 98.33. The underlying physical mechanisms of these peaks are explored; it is found that their near-field distributions are different. Moreover, the figure of merit (FOM) of the last absorption peak can reach 101.67, which is much higher than that of the first three absorption modes and even absorption bands of other works operated in the terahertz frequency. The designed device with multiple-band absorption and high FOM could provide numerous potential applications in terahertz technology-related fields.

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