1,6-bis(trichlorosilyl)hexane (C6Cl), polystyrene (PS), and cross-linked polystyrene (CPS) were investigated as gate dielectric modified layers for high performance organic transistors. The influence of the surface energy, roughness and morphology on the charge transport of the organic thin-film transistors (OTFTs) was investigated. The surface energy and roughness both affect the grain size of the pentacene films which will control the charge carrier mobility of the devices. Pentacene thin-film transistors fabricated on the CPS modified dielectric layers exhibited charge carrier mobility as high as 1.11 cm2 V-1 s-1. The bias stress stability for the CPS devices shows that the drain current only decays 1% after 1530 s and the mobility never decreases until 13530 s.
The effect of curing frequency on the morphology of polymer networks and the electrooptical property of normal-mode polymer-stabilized cholesteric textures (PSCTs) has been investigated. The scanning electron microscopy indicates that the shape of polymer networks transforms from honeycomb-like to fiber-like due to the increased solubility of the monomer at higher curing frequencies. The PSCTs cured at lower frequencies with sufficiently large network voids show a two-stage reorientation process that correlates with two kinds of cholesteric liquid crystal (LC) under different environments. The threshold voltage decreases as the curing frequency increases from 1 Hz to 10,000 Hz, while the field-off response time increases.
After powder metallurgy and carbon/carbon brake materials, carbon-ceramic brake material (C/C-SiC) is a new generation of braking material. There are currently some batches of brake materials whose friction performance could be better: slightly higher than the standard. SiC was introduced into the C/C-SiC brake disc through Polymer Impregnation and Pyrolysis (PIP), and the composition and friction-wear performance C/C-SiC-SiCp were investigated. The findings indicate that the SiC introduced by PIP is amorphous, existing in the material’s pores, and the porosity is reduced to 7%. With the increase in speed, The C/C-SiC-SiCp braking curve demonstrates a transition from inverted trapezoidal to saddle-shaped. The line wear rate is reduced by 0.6 μm/cycle at medium and high speeds compared with C/C-SiC.
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