Metal-halide perovskite-based green and red light-emitting diodes (LEDs) have witnessed a rapid development because of their facile synthesis and processability; however, the blue-band emission is constrained by their unstable chemical properties and poorly conducting emitting layers. Here, we show a trioctylphosphine oxide (TOPO)-mediated one-step approach to realize bright deep-blue luminescent FAPbBr3 nanoplatelets (NPLs) with enhanced stability and charge transport. The concentration of NPL surface ligands is shown to be progressively tuned via varying the amount of intermediate TOPO due to the acid–base equilibrium between protic acid and TOPO. By effectively optimizing the concentration of surface ligands, the structural integrity of NPL solids can be preserved in ambient air for a week, mainly because of the highly ordered and dense solid assembly and the reduced defects. The removal of excess organic ligands also enables the improvement of charge mobility by orders of magnitude. Ultimately, ultrapure deep-blue perovskite LEDs (439 nm) with a narrow emission width of 14 nm and a peak EQE of 0.14% are achieved at low driving voltage. Our finding expands the current understanding of surface ligand modulation in the development of pure bromide deep-blue perovskite optoelectronics.
Recently, lead sulfide (PbS) quantum dots (QDs) have demonstrated great potential in becoming one of the most promising next-generation photoelectrical materials for photodetectors. PbS QDs provide fascinating properties including size-controllable spectral sensitivity, a wide and tunable absorption range, cost-efficient solution processability, and flexible substrate compatibility. One of the key problems that limit the performance of PbS QDs-based photodetectors is inefficient carrier transfer. Long ligands decorating the outside surface of PbS QDs to protect them against degeneration inhibit the transfer of electrical charge carriers and thereby limit the device performance. To overcome this problem, the long ligands need to be effectively exchanged. Here, a two-step ligand-exchange method is demonstrated. The QDs are pretreated using methylammonium iodide in solution as the first step ligand exchange before the layer-by-layer deposition process and solid-state ligand exchange. The grazing-incidence small-angle X-ray scattering and X-ray photoelectron spectroscopy analyses prove a smaller spacing among the QDs and an increased ligand-exchange ratio by adopting the two-step method. This strongly indicates a better capability of charge transfer than the traditional one-step solid-state ligand-exchange technology. Devices fabricated using the two-step method present an enhancement of the charge-transfer capability with a larger current. The efficient charge transfer is further demonstrated by a significant 94% increase of the responsivity and a 57% enhancement of the detectivity of the PbS QDs-based photodetector, reaching 3302 mA/W and 5.06 × 1012 J, respectively.
Recently, metal halide perovskite light‐emitting diodes (Pero‐LEDs) have achieved significant improvement in device performance, especially for external quantum efficiency (EQE). And EQE is mostly determined by internal quantum efficiency of the emitting material, charge injection balancing factor (ηc), and light extraction efficiency (LEE) of the device. Herein, an ultrathin poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate) (UT‐PEDOT:PSS) hole transporter layer is prepared by a water stripping method, and the UT‐PEDOT:PSS can enhance ηc and LEE simultaneously in Pero‐LEDs, mostly due to the improved carrier mobility, more matched energy level alignment, and reduced photon loss. More importantly, the performance enhancement from UT‐PEDOT:PSS is quite universal and applicable in different kinds of Pero‐LEDs. As a result, the EQEs of Pero‐LEDs based on 3D, quasi‐3D, and quasi‐2D perovskites obtain enhancements of 42%, 87%, and 111%, and the corresponding maximum EQE reaches 17.6%, 15.0%, and 6.8%, respectively.
For organic-inorganic perovskite to be considered as the most promising materials for light emitting diodes and solar cell applications, the active materials must be proven to be stable under various conditions, such as ambient environment, heat and electrical bias. Understanding the degradation process in organic-inorganic perovskite light emitting diodes (PeLEDs) is important to improve the stability and the performance of the device. We revealed that electrical bias can greatly influence the luminance and external quantum efficiency of PeLEDs. It was found that device performance could be improved under low voltage bias with short operation time, and decreased with continuous operation. The degradation of perovskite film under high electrical bias leads to the decrease of device performance. Variations in the absorption, morphology and element distribution of perovskite films under different electrical bias revealed that organic-inorganic perovskites are unstable at high electrical bias. We bring new insights in the PeLEDs which are crucial for improving the stability.
The unbalanced carrier injection is a key factor that deteriorates the performance of blue InP quantum dot light-emitting diodes (QLEDs). Therefore, to achieve efficient blue InP QLEDs, an effective strategy that balances carrier injection through enhancing the hole injection and transport is in demand. In this study, we introduced an ultrathin MoO3 electric dipole layer between the hole injection layer and the hole transport layer (HTL) to form a pair of dipole-induced built-in electric fields with forward resultant direction to enhance hole injection and facilitate the balance of carrier injection. Meanwhile, the p-doping effect by MoO3 leads to increased carrier concentration and decreased trap density of interfacial HTL, therefore improved its effective hole mobility. Consequently, the maximal external quantum efficiency of blue InP QLEDs was enhanced from 1.0% to 2.1%. This work provides an effective method to balance carrier injection by modulating hole injection and transport, indicating the feasibility to realize high-efficiency QLEDs.
The development of in situ growth methods for the fabrication of high‐quality perovskite single‐crystal thin films (SCTFs) directly on hole‐transport layers (HTLs) to boost the performance of optoelectronic devices is critically important. However, the fabrication of large‐area high‐quality SCTFs with thin thickness still remains a significant challenge due to the elusive growth mechanism of this process. In this work, the influence of three key factors on in situ growth of high‐quality large‐size MAPbBr3 SCTFs on HTLs is investigated. An optimal “sweet spot” is determined: low interface energy between the precursor solution and substrate, a slow heating rate, and a moderate precursor solution concentration. As a result, the as‐obtained perovskite SCTFs with a thickness of 540 nm achieve a record area to thickness ratio of 1.94 × 104 mm, a record X‐ray diffraction peak full width at half maximum of 0.017°, and an ultralong carrier lifetime of 1552 ns. These characteristics enable the as‐obtained perovskite SCTFs to exhibit a record carrier mobility of 141 cm2 V−1 s−1 and good long‐term structural stability over 360 days.
Blue InP quantum dot light-emitting diodes (QLEDs) are promising candidates for environmental-friendly displays. To achieve efficient blue InP QLEDs through light extraction, the internal grating structure is a feasible way to extract waveguide modes, but it may bring complicated fabrication process and deteriorated electrical performance. In this work, we proposed an effective strategy to extract light from waveguide modes to air modes by using a thin hole transport layer (HTL), a high-index substrate, and substrate surface-roughening. Through optical tunneling, the thin HTL and the high-index substrate facilitate light transmission from waveguide modes to substrate modes. Thus, substrate surface-roughening can be applied to further extract light from enhanced substrate modes to air modes. As a result, light extraction efficiency has been significantly improved, leading to an external quantum efficiency enhancement from 2.1% to 2.8%, which is a record value among counterparts to date. This light extraction strategy is simple but effective to exploit the potential of high-efficiency (blue InP) QLEDs.
Full-color display is a primary challenge for the commercialization of quantum dots (QDs). In this study, we utilize the spectral narrowing phenomenon of microcavities to fabricate the red, green and blue quantum dot light-emitting diodes (QLEDs) with a single QD layer. This work theoretically analyses the role of microcavities in adjusting the emitting color of QLEDs. By enhanced microcavity and properly chosen spacer thickness, the spectral selectivity shifts, realizing the full-color-tunability of QLEDs. The tunable experimental spectra of microcavity QLEDs are observed, in excellent agreement with our theoretical design. Benefiting from the spectral narrowing of microcavity and the narrow spectra of QDs, a high color purity with full width at half maximum (FWHM) of 18 to 25 nm is realized, leading to a color gamut ratio of 104.8% compared to National Television System Committee (NTSC) standard. The light extraction is also enhanced by constructive interference and the Purcell effect in the microcavity. Moreover, in the fabrication of red, green, and blue pixels, patterning the transparent cathode has better feasibility and lower damage relative to patterning the light-emitting layer.
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