The interaction of vapor-deposited Al atoms with self-assembled monolayers (SAMs) of HS(CH2)15CH3 and HS(CH2)15CO2CH3 chemisorbed at Au{111} surfaces was studied using X-ray photoelectron spectroscopy, infrared spectroscopy, time-of-flight secondary ion mass spectrometry, and spectroscopic ellipsometry. For the CH3-terminated SAM, no reaction with C−H or C−C bonds was observed. For total Al doses up to ∼12 atoms/nm2, penetration to the Au−S interface occurs with no disruption of the average chain conformation and tilt, indicating formation of a highly uniform ∼1:1 Al adlayer on the Au. Subsequently, penetration ceases and a metallic overlayer begins to form at the SAM−vacuum interface. These results are explained in terms of an initial dynamic hopping of the −S headgroups on the Au lattice, which opens transient diffusion channels to the Au−S interface, and the closing of these channels upon completion of the adlayer. In contrast, Al atom interactions with the CO2CH3-terminated SAM are restricted to the vacuum interface, where in the initial stages discrete organometallic products form via reaction with the CO2CH3 group. First, a 1:1 complex forms with a reduced CO bond and an intact CH3 moiety. Further exposure leads to the additional reaction of about four Al atoms per ester, after which a metallic overlayer nucleates in the form of clusters. After the growth progresses to ∼30 Å, the clusters coalesce into a uniform metallic film. These results illustrate the extraordinary degree of control that organic substrates can exert during the course of metal film formation.

The interaction of vapor-deposited Al atoms with self-assembled monolayers (SAMs) of HS-(CH(2))(16)-X (X = -OH and -OCH(3)) chemisorbed at polycrystalline Au[111] surfaces was studied using time-of-flight secondary-ion mass spectrometry, X-ray photoelectron spectroscopy, and infrared reflectance spectroscopy. Whereas quantum chemical theory calculations show that Al insertion into the C-C, C-H, C-O, and O-H bonds is favorable energetically, it is observed that deposited Al inserts only with the OH SAM to form an -O-Al-H product. This reaction appears to cease prior to complete -OH consumption, and is followed by formation of a few overlayers of a nonmetallic type of phase and finally deposition of a metallic film. In contrast, for the OCH(3) SAM, the deposited Al atoms partition along two parallel paths: nucleation and growth of an overlayer metal film, and penetration through the OCH(3) SAM to the monolayer/Au interface region. By considering a previous observation that a CH(3) terminal group favors penetration as the dominant initial process, and using theory calculations of Al-molecule interaction energies, we suggest that the competition between the penetration and overlayer film nucleation channels is regulated by small differences in the Al-SAM terminal group interaction energies. These results demonstrate the highly subtle effects of surface structure and composition on the nucleation and growth of metal films on organic surfaces and point to a new perspective on organometallic and metal-solvent interactions.

The interaction of vapor-deposited Al atoms with self-assembled monolayers of HS(CH 2 ) 15 CO 2 H chemisorbed at polycrystalline Au(111) surfaces has been studied using time-of-flight secondary-ion mass spectrometry, X-ray photoelectron spectroscopy, and infrared spectroscopy. The Al deposition was performed incrementally at room temperature. The Al atoms do not penetrate into the organic monolayer, but rather they remain at the vacuum interface where they undergo chemical interactions solely with the CO 2 H groups. Reaction of the CO 2 H groups continues until slightly more than one atom per reacting group is deposited, on average; thereafter, no further reaction is observed. However, 20-25% of the CO 2 H groups remain unreacted, regardless of the Al coverage. These results are explained on the basis of a combination of chemical and steric effects. † Part of the special issue "Gabor Somorjai Festschrift".

We report a method for the unambiguous identification of molecules in biological and materials specimens at high practical lateral resolution using a new TOF-SIMS parallel imaging MS/MS spectrometer. The tandem mass spectrometry imaging reported here is based on the precise monoisotopic selection of precursor ions from a TOF-SIMS secondary ion stream followed by the parallel and synchronous collection of the product ion data. Thus, our new method enables simultaneous surface screening of a complex matrix chemistry with TOF-SIMS (MS(1)) imaging and targeted identification of matrix components with MS/MS (MS(2)) imaging. This approach takes optimal advantage of all ions produced from a multicomponent sample, compared to classical tandem mass spectrometric methods that discard all ions with the exception of specific ions of interest. We have applied this approach for molecular surface analysis and molecular identification on the nanometer scale. High abundance sensitivity is achieved at low primary ion dose density; therefore, one-of-a-kind samples may be relentlessly probed before ion-beam-induced molecular damage is observed.