The contributions of nonlocal mechanisms to nonlinear transport in semiconductors, with special emphasis on hot-electron emission at heterojunctions and its variations which are now commonly termed real-space transfer effects, are reviewed. The goal is to equitably account for and bring together the body of literature that has developed, often independently, in the U.S. and the former Soviet Union as well as in Europe and Japan.
This study is based on the results of a two-dimensional self-consistent laser simulator MINILASE for the GaAs/AlGaAs system. It predicts that the electron/hole density ratio in thin quantum wells (QW’s) of laser diodes with intrinsic QW active regions (QW p-i-n lasers) can be significantly different from unity and depends on the doping density near the active region. These deviations from local charge neutrality can have significant effects on the laser threshold.
Light emission from vertical cavity surface emitting lasers (VCSELs) is modeled as directed radiation away from a localized source within the VCSEL optical cavity into an open system as a continuous function of frequency, analogous to antenna radiation, but with field sources provided by spontaneous emission and gain. To allow near-analytical solution, a quasi-one-dimensional system is analyzed. This approach reproduces the familiar threshold condition, mode gain times lifetime equals unity, at the cavity quasimode frequency; however, it also predicts that lasing is not restricted to the quasimode frequency.
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