Resistive switching (RS) in metal oxides, which offers self‐compliance and multiple resistance states without the requirement of any high voltage forming step, holds the potential of application in selector less high density resistive random access memory (RRAM) devices. Typically, operation of metal oxide‐based RS devices requires the integration of additional oxide layers or circuit elements to achieve current compliance and complicated device architecture for high‐density memory applications. In this study, a self‐compliance, and multi‐level RS is demonstrated that does not require high voltage forming in a single layer non‐stoichiometric WO3–x. This study suggests that high oxygen vacancy (VO) concentration in the pristine WO3–x layer leads to its forming‐free filamentary switching characteristics, whereas reversible formation and annihilation of an oxygen‐rich region in the filament at the WO3–x/Pt junction has been envisaged to be responsible for self‐compliance set and voltage controlled multiple reset resistance states. The results demonstrate non‐stoichiometric WO3–x with an active metal/oxide interface permeable to reversible oxygen migration can pave the way for producing high density, reliable RRAM devices.
Both all-jute and jute-polypropylene blended yarns were chemically texturized by treating the yarns in 18% w/w sodium hydroxide solution at room temperature. As a result of chemical texturizing, both all-jute and jute-polypropylene blended yarns experienced increases in available air space and breaking elongation. Increase in available air space signified increase in bulk, while increase in breaking elongation signified increase in the stretch of the yams. Incorporation of polypropylene not only resulted in higher bulk and stretch of the texturized yarns but also facilitated its preferential migration to the surface of the yarns during texturizing. The bulk of the texturized jute-polypropylene blended yarn was even greater than that of all- wool yarn spun out of coarse Indian Chokla wool. But the breaking elongation of all-wool yarn was higher and the uniformity of its diameter was better than those of texturized jute-polypropylene yarn having a blend proportion, jute to polypro pylene, of 80 to 20. All-jute and jute-polypropylene blended yarns suffered appre ciable drops in tenacity when they were chemically texturized, but even then, the tenacities of these texturized yarns were greater than that of all-wool yarn. Moreover, wet/dry tenacity ratios of these texturized yarns were much superior to that of all- wool yarn.
Back-to-back connected asymmetric Schottky diodes having metal-semiconductor-metal (MSM) configuration are often encountered practically in solid state devices and, if the intended ohmic contact exhibits rectifying characteristics, then the extraction of diode parameters such as ideality factor and barrier height from forward Current-Voltage (I-V) plots using conventional methods becomes problematic. In this study, a new approach which predicts extremums in measured current-voltage (IV) graph assuming the dominant transport mechanism to be thermionic emission model, have been proposed. Using the proposed method, the first and second derivatives of the voltage- current function in combination to another previously established theoretical approach resulted in significantly accurate extraction of individual barrier heights of a metal-semiconductor-metal (MSM) junction from single experimental I-V measurement. On the other hand, if individual barrier heights are known, using our proposed method the individual ideality factors for the two back-to-back junctions can be calculated. The proposed method has been validated by analyzing a fabricated FeGa/n-Si/Ag MSM Schottky diode, where, the obtained results from this approach are compared with the other method and the values were found out to be in good agreement with each other.
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