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Thin films based on stoichiometric hafnium zirconate doped and co-doped with La, Gd, and/or Y have been grown by atomic layer deposition on TiN electrodes. The resulting TiN−ferroelectric−TiN capacitors have shown high endurance up to 1 × 10 11 switching cycles. The simultaneous use of two dopants (Y, La) or (Gd, La) in hafnium zirconate increases the amount of orthorhombic and tetragonal phases. Fatigue-free capacitors with remnant polarization ≥15 μC/cm 2 at 1 × 10 11 endurance cycles have been obtained for dopants having an atomic fraction of about 1.2−1.8% and showing great promise as active materials for emerging memory applications.