The capability of nanowires to relieve the stress introduced by lattice mismatching through radial relaxation opens the possibility to search for devices for optoelectronic applications. However, there are difficulties to fabricate, and therefore to explore the properties of nanowires with narrow diameters. Here we apply first principles calculations to study the electronic and optical properties of narrow InAs 1−x P x nanowires. Our results show that the absorption threshold can be pushed to near-ultraviolet region, and suggests that arrays of these nanowires with different diameters and compositions could be used as devices acting from the mid-infrared to the near-ultraviolet region.
S-matrix amplitudes for the electron-electron scattering are calculated in order to verify the physical equivalence between two Lorentz-breaking dual models. We begin with an extended Quantum Electrodynamics which incorporates CPT-even Lorentz-violating kinetic and mass terms. Then, in a process of gauge embedding, its gauge-invariant dual model is obtained. The physical equivalence of the two models is established at tree-level in the electron-electron scattering and the unpolarized cross section is calculated up to second order in the Lorentz-violating parameter.
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