¦ van der Waals gap Septuple layer J § J || T 1/2 J 0,1 || J 0,2 || J 0,3 || J 0,4 ||

Feasibility of many emergent phenomena that intrinsic magnetic topological insulators (TIs) may host depends crucially on our ability to engineer and efficiently tune their electronic and magnetic structures. Here we report on a large family of intrinsic magnetic TIs in the homologous series of the van der Waals compounds (MnBi2Te4)(Bi2Te3)m with m = 0, ⋯, 6. Magnetic, electronic and, consequently, topological properties of these materials depend strongly on the m value and are thus highly tunable. The antiferromagnetic (AFM) coupling between the neighboring Mn layers strongly weakens on moving from MnBi2Te4 (m = 0) to MnBi4Te7 (m = 1) and MnBi6Te10 (m = 2). Further increase in m leads to change of the overall magnetic behavior to ferromagnetic (FM) one for (m = 3), while the interlayer coupling almost disappears. In this way, the AFM and FM TI states are, respectively, realized in the m = 0, 1, 2 and m = 3 cases. For large m numbers a hitherto-unknown topologically nontrivial phase can be created, in which below the corresponding critical temperature the magnetizations of the non-interacting 2D ferromagnets, formed by the MnBi2Te4 building blocks, are disordered along the third direction. The variety of intrinsic magnetic TI phases in (MnBi2Te4)(Bi2Te3)m allows efficient engineering of functional van der Waals heterostructures for topological quantum computation, as well as antiferromagnetic and 2D spintronics.

In-situ metalation of porphyrin molecules in ultrahigh vacuum (UHV) is of great interest for the characterization of pure species in a controlled environment. Here, we report the characterization of the electronic states and the moleculesʼ geometrical adaptation during the formation of pure 2H-5,10,15,20-tetraphenylporphyrin (2H-TPP) and Fe- tetraphenylporphyrin (Fe-TPP) layers on Ag(111) single crystal. Core level absorption spectra indicate the flat conformation of the monolayer suggesting an adatom hopping instead of a surface mediated dopant diffusion for the metalation process. Photoemission points out that the interaction between Fe d z -states and Ag bands increases the monolayer metallic character already induced by the charge transfer from the substrate.

Scratching the surface: Formation of a monolayer of 2H-tetraphenylporphyrins (2H-TPP) on Ag(111), either by sublimation of a multilayer in the range 525-600 K or by annealing (at the same temperature) a monolayer deposited at room temperature, induces a chemical modification of the molecules. Rotation of the phenyl rings into a flat conformation is observed and tentatively explained, by using DFT calculations, as a peculiar reaction due to molecular dehydrogenation.

Graphene is one of the most promising materials for nanoelectronics owing to its unique Dirac cone-like dispersion of the electronic state and high mobility of the charge carriers. However, to facilitate the implementation of the graphene-based devices, an essential change of its electronic structure, a creation of the band gap should controllably be done. Brought about by two fundamentally different mechanisms, a sublattice symmetry breaking or an induced strong spin-orbit interaction, the band gap appearance can drive graphene into a narrow-gap semiconductor or a 2D topological insulator phase, respectively, with both cases being technologically relevant. The later case, characterized by a spin-orbit gap between the valence and conduction bands, can give rise to the spin-polarized topologically protected edge states. Here, we study the effect of the spin-orbit interaction enhancement in graphene placed in contact with a lead monolayer. By means of angle-resolved photoemission spectroscopy, we show that intercalation of the Pb interlayer between the graphene sheet and the Pt(111) surface leads to formation of a gap of ∼200 meV at the Dirac point of graphene. Spin-resolved measurements confirm the splitting to be of a spin-orbit nature, and the measured near-gap spin structure resembles that of the quantum spin Hall state in graphene, proposed by Kane and Mele [ Phys. Rev. Lett. 2005 , 95 , 226801 ]. With a bandstructure tuned in this way, graphene acquires a functionality going beyond its intrinsic properties and becomes more attractive for possible spintronic applications.

Here, it is demonstrated, using high-resolution X-ray spectroscopy and density functional theory calculations, that 2H-tetraphenyl porphyrins metalate at room temperature by incorporating a surface metal atom when a (sub)monolayer is deposited on 3d magnetic substrates, such as Fe(110) and Ni(111). The calculations demonstrate that the redox metalation reaction would be exothermic when occurring on a Ni(111) substrate with an energy gain of 0.89 eV upon embedding a Ni adatom in the macrocycle. This is a novel way to form, via chemical modification and supramolecular engineering, 3d-metal-organic networks on magnetic substrates with an intimate bond between the macrocycle molecular metal ion and the substrate atoms. The achievement of a complete metalation by Fe and Ni can be regarded as a test case for successful preparation of spintronic devices by means of molecular-based magnets and inorganic magnetic substrates.

The molecule–substrate interaction plays a key role in charge injection organic-based devices. Charge transfer at molecule–metal interfaces strongly affects the overall physical and magnetic properties of the system, and ultimately the device performance. Here, we report theoretical and experimental evidence of a pronounced charge transfer involving nickel tetraphenyl porphyrin molecules adsorbed on Cu(100). The exceptional charge transfer leads to filling of the higher unoccupied orbitals up to LUMO+3. As a consequence of this strong interaction with the substrate, the porphyrin’s macrocycle sits very close to the surface, forcing the phenyl ligands to bend upwards. Due to this adsorption configuration, scanning tunneling microscopy cannot reliably probe the states related to the macrocycle. We demonstrate that photoemission tomography can instead access the Ni-TPP macrocycle electronic states and determine the reordering and filling of the LUMOs upon adsorption, thereby confirming the remarkable charge transfer predicted by density functional theory calculations.

Impurity doping of ultrasmall nanoscale (usn) silicon (Si) currently used in ultralarge scale integration (ULSI) faces serious miniaturization challenges below the 14 nm technology node such as dopant out-diffusion and inactivation by clustering in Si-based field-effect transistors (FETs). Moreover, self-purification and massively increased ionization energy cause doping to fail for Si nano-crystals (NCs) showing quantum confinement. To introduce electron- (n-) or hole- (p-) type conductivity, usn-Si may not require doping, but an energy shift of electronic states with respect to the vacuum energy between different regions of usn-Si. We show in theory and experiment that usn-Si can experience a considerable energy offset of electronic states by embedding it in silicon dioxide (SiO2) or silicon nitride (Si3N4), whereby a few monolayers (MLs) of SiO2 or Si3N4 are enough to achieve these offsets. Our findings present an alternative to conventional impurity doping for ULSI, provide new opportunities for ultralow power electronics and open a whole new vista on the introduction of p- and n-type conductivity into usn-Si.