Piezoresistivity effect of a silicon carbide-based ceramic fiber (Nicalon family) was evaluated when a single fiber was buried at the tensile plane in a plastic rectangular bar subjected to bending to apply a stable tensile strain. Electrical resistivity change during the bending was monitored by a digital highresistance meter. From the fracture strain, Young's modulus, and the resistivity change, the piezoresistance coefficient is calculated to be 1.6 ؋ 10 ؊11 m 2 /N, which is in agreement with the reported value for silicon carbide single crystals and our own reported value for polycrystalline silicon carbide ceramics.
Just after fabrication of a MgO protective film by EB deposition, a surface modification of the film with a fluorinating gas was performed. This technique achieved a remarkable reduction in the amount of outgassing from the film, and therefore it can be expected to shorten the duration of the gas-evacuation process in PDP manufacturing.
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