The use of hydrogenated amorphous silicon, a-Si:H, for solar cell applications has shown interesting possibilities for increasing the efficiency of heterojunctions and reducing the cost of solar cells. Hydrogen incorporation in thin films of amorphous silicon is crucial for obtaining good electrical properties because it passivates the dangling bonds in the structure. The study of several parameters that influence the formation of films is necessary in order to optimize the material properties. In this paper, the optical emission of plasma during film growth by sputtering was studied in order to evaluate the hydrogenation process, with varying levels of hydrogen in a H-Ar plasma. The results show the possibility of controlling the process through optical emission spectroscopy (OES) without the need to introduce further analytical tools in the reactors.
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