PACS 78.55.Cr, 81.15.Gh Gallium nitride layers were grown epitaxially on sapphire substrates in a LP-MOCVD reactor using trimethylgallium and ammonia. GaN films were also obtained by nitridation, exposing GaAs substrates to ammonia in the same reactor under similar conditions. The temperature ranged between 750 °C and 900 °C, while the pressure was adjusted between 75 and 585 Torr. Photoluminescence measurements were made on the samples using a 325 nm He -Cd laser; near band edge emission and subbandgap luminescence were observed. The luminescence color of the sapphire grown layers went from orange to yellow-green, while it ranged from yellow to blue-violet in the nitridated samples.
For the first time gallium arsenide field-effect transistors have been made using epitaxial layers grown by the close spaced vapor transport technique (CSVT). The layers were unintentionally doped and their free-carrier concentration was adjusted through the growth parameters to around 1017 cm−3. For the growth of the layers, water vapor was used as transporting gas. This transistor confirms the capability of the simplest and most inexpensive epitaxial technique (CSVT) for growing device quality gallium arsenide epitaxial layers.
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