We describe a hybrid evanescent-wave sensor component that we fabricated by using an integrated optical interferometer with a specially adapted photodetector array. The design of the interferometer is based on the use of tapered waveguides to obtain two intersecting collimated beams. Phase shifts can be measured with an angular precision of better than 10(-3) rad, which corresponds to a superstrate index change inferior of 10(-6) with our structure. The interest in the device as a chemical sensor is experimentally demonstrated. The same optical component could be used in a variety of other sensor applications, e.g., biological and immunological sensors.
Q0 VTH Towards a counter IDET VINT CINT + -∆V=Q 0 /C INT VTH V INT t ∆V=Q 0 /C INT VTH V INT t Abstract-A pixel-level ADC technique for CMOS image sensors is presented. As the charge represents accurately the amount of illumination, the principle consists in counting small charge packets which come from the detector. Based on a 0.13 µm CMOS technology, simulation results and first measurements are presented showing that the LSB value can be reduced to 1900 electrons with a static power of 250nW per pixel. For the moment, due to the available technology, this technique, is restricted to medium size pixels, i.e. 50x50 µm².
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