1 Introduction Semiconductor quantum dots (QDs) can be treated as artificial atoms [1] exhibiting a discrete density of states for the confined charge carriers. In the case of type-I QDs, electrons and semiconductor holes can be captured by the quantum dot (QD) confinement potential forming spatially bound excitonic complexes of various kind [2] almost irrespective of underlying binding energies. Especially the biexciton (XX) complex has attracted strong attention in QDs, as its decay cascade via the exciton (X) states facilitates the emission of entangled photon pairs on demand [3-5], a crucial building block for quantum cryptography networks [6].For QDs exhibiting a wurtzite crystal structure, the inherent crystal polarisation [7] builds up charges at the heterointerfaces to the surrounding matrix material constituting internal fields in the order of MV/cm [8]. Hence, the confined charge carriers are confined in spatially separated QD-areas along the [0001]-direction of the wurtzite crystal.
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