No abstract

Transparent top electrodes for solid‐state dye‐sensitized solar cells (ssDSCs) allow for fabrication of mechanically stacked ssDSC tandems, partially transparent ssDSCs for building integration, and ssDSCs on metal foil substrates. A solution‐processed, highly transparent, conductive electrode based on PEDOT:PSS [poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate)] and spray‐deposited silver nanowires (Ag NWs) is developed as an effective top contact for ssDSCs. The electrode is solution‐deposited using conditions and solvents that do not damage or dissolve the underlying ssDSC and achieves high performance: a peak transmittance of nearly 93% at a sheet resistance of 18 Ω/square – all without any annealing that would harm the ssDSC. The role of the PEDOT:PSS in the electrode is twofold: it ensures ohmic contact between the ssDSC 2,2′,7,7′‐tetrakis‐(N,N‐di‐p‐methoxyphenylamine)9,9′‐spirobifluorene (Spiro‐OMeTAD) overlayer and the silver nanowires and it decreases the series resistance of the device. Semitransparent ssDSCs with D35 dye fabricated using this Ag NW/PEDOT:PSS transparent electrode show power conversion efficiencies of 3.6%, nearly as high as a reference device using an evaporated silver electrode (3.7%). In addition, the semitransparent ssDSC shows high transmission between 700–1100 nm, a necessity for use in efficient tandem devices. Such an electrode, in combination with efficient ssDSCs or hybrid perovskite‐sensitized solar cells, can allow for the fabrication of efficient, cost‐effective tandem photovoltaics.

The charge density wave transition is investigated in the bi-layer family of rare earth tritelluride RTe3 compounds (R = Sm, Gd, Tb, Dy, Ho, Er, Tm) via high resolution x-ray diffraction and electrical resistivity. The transition temperature increases monotonically with increasing lattice parameter from 244(3) K for TmTe3 to 416(3) K for SmTe3. The heaviest members of the series, R = Dy, Ho, Er, Tm, are observed to have a second transition at a lower temperature, which marks the onset of an additional CDW with wavevector almost equal in magnitude to the first, but oriented in the perpendicular direction.

Despite the promise of quantum dots (QDs) as a light-absorbing material to replace the dye in dye-sensitized solar cells, quantum dot-sensitized solar cell (QDSSC) efficiencies remain low, due in part to high rates of recombination. In this article, we demonstrate that ultrathin recombination barrier layers of Al 2 O 3 deposited by atomic layer deposition can improve the performance of cadmium sulfide (CdS) quantum dot-sensitized solar cells with spiro-OMeTAD as the solid-state hole transport material. We explored depositing the Al 2 O 3 barrier layers either before or after the QDs, resulting in TiO 2 /Al 2 O 3 /QD and TiO 2 /QD/Al 2 O 3 configurations. The effects of barrier layer configuration and thickness were tracked through current−voltage measurements of device performance and transient photovoltage measurements of electron lifetimes. The Al 2 O 3 layers were found to suppress dark current and increase electron lifetimes with increasing Al 2 O 3 thickness in both configurations. For thin barrier layers, gains in open-circuit voltage and concomitant increases in efficiency were observed, although at greater thicknesses, losses in photocurrent caused net decreases in efficiency. A close comparison of the electron lifetimes in TiO 2 in the TiO 2 /Al 2 O 3 /QD and TiO 2 /QD/Al 2 O 3 configurations suggests that electron transfer from TiO 2 to spiro-OMeTAD is a major source of recombination in ss-QDSSCs, though recombination of TiO 2 electrons with oxidized QDs can also limit electron lifetimes, particularly if the regeneration of oxidized QDs is hindered by a too-thick coating of the barrier layer.

Semi-transparent organic photovoltaics are of interest for a variety of photovoltaic applications, including solar windows and hybrid tandem photovoltaics. The figure shows a photograph of our semi-transparent solar cell, which has a power conversion efficiency of 5.0%, with an above bandgap transmission of 34% and a sub-bandgap transmission of 81%.

Introduction of a naphthalocyanine moiety to phthalocyanine allows for a gradual red shift of the absorption spectrum in the resulting chromophore. Using silicon as a core atom allows for the introduction of additional siloxane side chains which mitigate dye aggregation. A dye-sensitized solar cell with this hybrid sensitizer exhibits a broad and flat IPCE of 80% between 600 and 750 nm and high photocurrent densities of 19.0 mA/cm(2).

Atomic layer deposition (ALD) was used to fabricate Al(2)O(3) recombination barriers in solid-state dye-sensitized solar cells (ss-DSSCs) employing an organic hole transport material (HTM) for the first time. Al(2)O(3) recombination barriers of varying thickness were incorporated into efficient ss-DSSCs utilizing the Z907 dye adsorbed onto a 2 μm-thick nanoporous TiO(2) active layer and the HTM spiro-OMeTAD. The impact of Al(2)O(3) barriers was also studied in devices employing different dyes, with increased active layer thicknesses, and with substrates that did not undergo the TiCl(4) surface treatment. In all instances, electron lifetimes (as determined by transient photovoltage measurements) increased and dark current was suppressed after Al(2)O(3) deposition. However, only when the TiCl(4) treatment was eliminated did device efficiency increase; in all other instances efficiency decreased due to a drop in short-circuit current. These results are attributed in the former case to the similar effects of Al(2)O(3) ALD and the TiCl(4) surface treatment whereas the insulating properties of Al(2)O(3) hinder charge injection and lead to current loss in TiCl(4)-treated devices. The impact of Al(2)O(3) barrier layers was unaffected by doubling the active layer thickness or using an alternative ruthenium dye, but a metal-free donor-π-acceptor dye exhibited a much smaller decrease in current due to its higher excited state energy. We develop a model employing prior research on Al(2)O(3) growth and dye kinetics that successfully predicts the reduction in device current as a function of ALD cycles and is extendable to different dye-barrier systems.

High solubility is a requirement for energy relay dyes (ERDs) to absorb a large portion of incident light and significantly improve the efficiency of dye-sensitized solar cells (DSSCs). Two benzonitrile-soluble ERDs, BL302 and BL315, were synthesized, characterized, and resulted in a 65% increase in the efficiency of TT1-sensitized DSSCs. The high solubility (180 mM) of these ERDs allows for absorption of over 95% of incident light at their peak wavelength. The overall power conversion efficiency of DSSCs with BL302 and BL315 was found to be limited by their energy transfer efficiency of approximately 70%. Losses due to large pore size, dynamic collisional quenching of the ERD, energy transfer to desorbed sensitizing dyes and static quenching by complex formation were investigated and it was found that a majority of the losses are caused by the formation of statically quenched ERDs in solution.