Lee, Sunwoo; Mazurowski, John; Ramseyer, G. ; and Dowben, Peter A., "Characterization of boron carbide thin films fabricated by plasma enhanced chemical vapor deposition from boranes" (1992 We have fabricated boron carbide thin films on Si( 111) and other substrates by plasma-enhanced chemical-vapor deposition (PECVD). The PECVD of boron carbides from nido-cage boranes, specially nido-pentaborane( 9) (B,H,), and methane ( CH4) is demonstrated. The band gap is closely correlated with the boron to carbon ratio and can range from 0.77 to 1.80 eV and is consistent with the thermal activation barrier of 1.25 eV for conductivity. We have made boron carbide by PECVD from pentaborane and methane that is sufficiently isotropic to obtain resistivities as large as 10" n cm at room temperature. This material is also shown to be suitable for photoactive p-n heterojunction diode fabrication in combination with Si( 111).
Cadmium sulfide (CdS) layers were deposited from an aqueous solution of thiourea, cadmium sulfate, and ammonia on (100) n-InP at 60–95 °C. X-ray photoelectron spectroscopy showed that the deposition process effectively removes native oxides on InP and forms a protective layer for subsequent dielectric deposition. Surface analysis also showed that the InP surface is not P deficient following oxide deposition on CdS-treated InP. Capacitance–voltage and conductance–voltage measurements of metal–insulator–semiconductor (MIS) capacitors were used to compare samples with and without CdS films between InP and a deposited insulator. Capacitance–voltage response of CdS-treated MIS structures showed well-defined regions of accumulation, depletion, and inversion. The interface-state density at midgap was reduced from 5×1011 to 6×1010 eV−1 cm−2 with CdS treatment. Depletion-mode MIS field-effect transistors made using this new passivation technique exhibited superior device performance to that of untreated samples.
-Tosh, S.; Ramseyer, G.O.; Hwang, Chanyong; and Onellion, M., "Fabrication of ferromagnetic and antiferromagnetic chromium oxides by organometallic chemical vapor deposition " (1990). Peter Dowben Publications. 104.
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