The operation of organic diodes in solar cells and light-emitting displays strongly depends on the properties of the interfaces between hole- and electron-carrying organic semiconductors. Such interfaces are difficult to characterize, as they are usually buried under the surface or exist as an irregular “bulk heterojunction.” Using a unique fluorinated barrier layer-based lithographic technique, we fabricated a lateral organic p-n junction, allowing the first observation of the potential at an organic p-n interface simultaneously with the charge transport measurements. We find that the diode characteristics of the device (current output and rectification ratio) are consistent with the changes in the surface potentials near the junction, and the current-voltage curves and junction potentials are strongly and self-consistently modulated by a third, gate electrode. The generality of our technique makes this an attractive method to investigate the physics of organic semiconductor junctions. The lithographic technique is applicable to a wide variety of soft material patterns. The observation of built-in potentials makes an important connection between organic junctions and textbook descriptions of inorganic devices. Finally, these kinds of potentials may prove to be controlling factors in charge separation efficiency in organic photovoltaics.
Polyethylene glycol-400 (PEG) based polyurethane (PU) and polyacrylonitrile (PAN) semi-interpenetrating polymer networks (SIPNs) (PU/PAN; 90/10, 70/30, 60/40, and 50/50) have been prepared by sequential polymerization method. The prepared SIPNs have been characterized by physicomechanical properties. The microcrystalline parameters such as crystal size (͗N͘), lattice disorder (g), surface (D s ) and volume (D v ) weighted crystal size of SIPNs have been estimated using wide angle X-ray scattering studies, and quantification of the polymer network has been carried out on the basis of these parameters. The microstructural parameters have been established using Exponential, Lognormal, and Reinhold asymmetric column length distribution functions and the results are compiled.
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