One-pot wet-chemical synthesis is a simple way to obtain nanoparticles (NPs) with a well-defined shape and composition. However, achieving good control over NP synthesis would require a comprehensive understanding of the mechanisms of NP formation, something that is challenging to obtain experimentally. Here, we study the formation of gold (Au) core-palladium (Pd) shell NPs under kinetically and thermodynamically controlled reaction conditions using in situ liquid cell transmission electron microscopy (TEM). By controlling the reaction temperature, we demonstrate that it is possible to tune the shape of Au nanorods to Au-Pd arrow-headed structures or to cuboidal core-shell NPs. Our in situ studies show that the reaction temperature can switch the Pd shell growth between the kinetically and thermodynamically dominant regimes. The mechanistic insights reported here reveal how the reaction temperature affects the packing of the capping agents and how the facet selection of depositing shell atoms drives the shell formation under different kinetic conditions, which is useful for synthesizing NPs with greater design flexibility in shape and elemental composition for various technological applications.

We can learn about the interactions between nanoparticles (NPs) in solution and solid surfaces by tracking how they move. Here, we use liquid cell transmission electron microscopy (TEM) to follow directly the translation and rotation of Au nanobipyramids (NBPs) and nanorods (NRs) adsorbed onto a SiN x surface at a rate of 300 frames per second. This study is motivated by the enduring need for a detailed description of NP motion on this common surface in liquid cell TEM. We will show that NPs move intermittently on the time scales of milliseconds. First, they rotate in two ways: (1) rotation around the center of mass and (2) pivoted rotation at the tips. These rotations also lead to different modes of translation. A NP can move through small displacements in the direction roughly parallel to its body axis (shuffling) or with larger steps via multiple tip-pivoted rotations. Analysis of the trajectories indicates that both displacements and rotation angles follow heavy-tailed power law distributions, implying anomalous diffusion. The spatial and temporal resolution afforded by our approach also revealed differences between the different NPs. The 50 nm NRs and 100 nm NBPs moved with a combination of shuffles and rotationmediated displacements after illumination by the electron beam. With increasing electron fluence, 50 nm NRs also started to move via desorption-mediated jumps. The 70 nm NRs did not exhibit translational motion and only made small rotations. These results describe how NP dynamics evolve under the electron beam and how intermittent pinning and release at specific adsorption sites on the solid surface control NP motion at the liquid−solid interface. We also discuss the effect of SiN x surface treatment on NP motion, demonstrating how our approach can provide broader insights into interfacial transport.

Self-assembly of solvated nanoparticles (NPs) is governed by numerous competing interactions. However, relatively little is known about the time-dependent mechanisms through which these interactions enable and guide the nanoparticle self-assembly process. Here, using in situ transmission electron microscopy imaging combined with atomistic modeling, it is shown that the forces governing the self-assembly of hydrophobic nanoparticles change with the nanoparticle shapes. By comparing how gold nanospheres, nanocubes, nanorods, and nanobipyramids assemble, it is shown that the strength of the hydrophobic interactions depends on the overlap of the hydrophobic regions of the interacting nanoparticle surfaces determined by the nanoparticle shapes. Specifically, this study reveals that, in contrast to spherical nanoparticles, where van der Waals forces play an important role, hydrophobic interactions can be more relevant for nanocubes with flat side faces, where an oriented attachment between the nanocubes is promoted by these interactions. The attachment of nanocubes is observed to proceed in two distinct pathways: nanocubes either: (i) prealign their faces before the attachment, or (ii) first connect through a misaligned (edge-to-edge) attachment, followed by a postattachment alignment of their faces. These results have important implications for understanding the interaction dynamics of NPs and provide the framework for the design of future self-assembled nanomaterials.

Silicon Germanium (SixGe1-x or SiGe) is an important semiconductor material for the fabrication of nanowire-based gate-all-around transistors in the next-generation logic and memory devices. During the fabrication process, SiGe can either be used as a sacrificial layer to form suspended horizontal Si nanowires or, because of its higher carrier mobility, SiGe can also be used as a possible channel material that replaces Si in both horizontal and vertical nanowires. In both cases, there is a pressing need to understand and develop nanoscale etching processes that enable controlled and selective removal of SiGe with respect to Si. Here, we developed and tested solution-based selective etching processes for SiGe in composite (SiNx/Si0.75Ge0.25/Si) vertical nanowires. The etching solutions were formed by 2 mixing acetic acid (CH3COOH), hydrogen peroxide (H2O2), and hydrofluoric acid (HF). Here, the two chemicals (H2O2 and CH3COOH) react to form highly oxidizing peracetic acid (PAA or). The hydrofluoric acid serves both as a catalyst for PAA formation and as an etchant for oxidized SiGe. Our study shows that an increase in either of the oxidizer concentrations increases the etch rate, and the fastest etch rate of SiGe is associated with the highest PAA concentration. Moreover, using in situ liquid phase TEM imaging, we tested the stability of nanowires during wet etching and identified that SiGe/Si interface to be the weakest plane; we found that once the diameter of the 160-nm-tall Si0.75Ge0.25 nanowire reaches ~15 nm during the etching, the nanowire breaks at or very close to this interface. Our study provides an important insight into the details of the wet etching of SiGe and some of the associated failure modes that are becoming extremely relevant for the fabrication processes as the size of the transistors shrink with every new device-generation.