Deep level traps in melt grown ZnO single crystal created by oxygen implantation and subsequent annealing in air were studied by deep level transient spectroscopy measurement between 80K and 300 K. The E C-0.29eV trap (E3) was the dominant peak in the as-grown sample and no new defects were created in the as-O-implanted sample. The single peak feature of the DLTS spectra did not change with the annealing temperature up to 750 o C, but the activation energy decreased to 0.22 eV. This was explained in terms of a thermally induced defect having a peak close to but inseparable from the original 0.29 eV peak. A systematic study on a wide range of the rate window for the DLTS measurement successfully separated the Arrhenius plot data originated from different traps. It was inferred that the E3 concentration in the samples did not change after the O-implantation. The traps at E C-0.11eV, E C-0.16eV and E C-0. 58eV were created after the annealing. The E C-0.16 eV trap was assigned to an intrinsic defect. No DLTS signal was found after the sample was annealed to 1200 o C.
Arsenic-doped ZnMgO films were fabricated on SiO 2 by the radio frequency magnetron sputtering technique at different substrate temperatures during growth. The yielded films were characterized by room temperature Hall measurement, x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy, secondary ion mass spectroscopy, nuclear reaction analysis and low-temperature photoluminescence. As-doped samples grown at low substrate temperature (350 • C) were n-type conducting (n ∼ 10 18 cm −3 ), with evidence showing that the hydrogen impurity was an important shallow donor associated with the observed n-type conduction. Conversion of n-type to p-type conduction being observed at the substrate temperature of ∼400 • C was associated with the formation of the As Zn (V Zn ) 2 shallow acceptor complex and the drastic reduction of the hydrogen content.
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