Recently a new diluted magnetic semiconductor, (Ba,K)(Zn,Mn)2As2 (BZA), with high Curie temperature was discovered, showing an independent spin and charge-doping mechanism. This makes BZA a promising material for spintronics devices. We report the successful growth of a BZA single crystal for the first time in this study. An Andreev reflection junction, which can be used to evaluate spin polarization, was fabricated based on the BZA single crystal. A 66% spin polarization of the BZA single crystal was obtained by Andreev reflection spectroscopy analysis.
Nonlinear concentration-dependent electronic and optical
properties
of the Si1–x
Ge
x
substitutional alloy nanowires are investigated using first-principles
calculations. The nonuniform distribution of Ge (or Si) atoms is found,
and the resulting orbital hybridization of the inner Ge or Si atoms
results in the nonlinear Ge concentration dependence of electronic
properties in the Si1–x
Ge
x
alloy NWs, which suggests an effective approach
to modulate band-gap properties of the NWs along all three directions.
Moreover, a strong adsorption of solar radiation and a high quantum
yield is predicted in (110)-oriented alloy NWs, which implies a great
potential of Si1–x
Ge
x
alloy NWs in the optical electronics applications
on nanoscale.
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