Intense electroluminescence in the range 77-300 K has been observed from interface transitions in type II P-Ga 0.84 In 0.16 As 0.22 Sb 0.78 / n-In 0.83 Ga 0.17 As 0.82 Sb 0.18 single heterojunctions grown by liquid phase epitaxy from an In-rich melt. The quaternary epitaxial layers forming the P-n heterojunction were unintentionally doped and grown lattice-matched onto a (100)-oriented n-type InAs substrate. The electroluminescence and photoluminescence emission spectra from the heterostructure were investigated in detail and are discussed below. The luminescence spectra contained two interface-induced emission bands: hν A which was identified with radiative transitions between electron and hole quantum well sub-bands across the P-Ga 0.84 In 0.16 As 0.22 Sb 0.78 /n-In 0.83 Ga 0.17 As 0.82 Sb 0.18 heterointerface, while the emission band hν B originates from radiative transitions involving acceptor states in the narrow gap In 0.83 Ga 0.17 As 0.82 Sb 0.18 near the type II heteroboundary.
ABsTRAcrRecent years were marked by persistent attempts to create a hybrid optoelectromc matrix processor realizing matrix-vector multiplication and having greater throughput than its modem and perspective electronic analogues. An experimental breadboard model of such processor based on the multichannel acoustooptical modulator intended for processing ofradar signals is described, results ofmathematical simulation and experimental investigations are presented.
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