In this paper, highly photocatalytic activity of nano-TiO 2 modified fluorocarbon paint for formaldehyde degradation has been successfully prepared. The nano-TiO 2 was prepared in sol-gel process and the TEM of the sample shows the mean diameters of nano-TiO 2 particles are less than 10nm. The photoluminescence (PL) spectrum shows a sharp peak at 502nm under the excitation source of 493nm. After modified by surface active agent monolaurin with an HLB value of 5.2, the nano-TiO 2 can be added into fluorocarbon paint successfully. The efficiency of the formaldehyde degradation by the nano-TiO 2 modified fluorocarbon paint is 95.0% under natural light irradiation while the mechanical properties can meet the actual application requirements. So the problem of formaldehyde organic pollutants produced during decoration can be managed from its source and it has the effect of health, energy saving, and air purification.
Keywords-nano-TiO 2 ; fluorocarbon paint; degradation of formaldehyde properties____________________________________ 978-1-4799-3336-5/13/$31.00
Sn doped TiO2nanocrystals were synthesized via a single-step hydrothermal method and the influences of Sn doping on TiO2have been investigated. It is found that Sn doping not only facilitates the crystal transfer from anatase to rutile but also facilitates the morphology change from sphere to rod. The states of Sn were studied by XPS and the creation of oxygen vacancies by Sn doping is confirmed. Moreover, the HRTEM results suggest that Sn facilitates preferential growth of resulting nanocrystals along (110) axis, which results in the formation of rod-like rutile nanocrystals.
The amorphous silicon (a-Si) film was crystallized on glass by a simple method employed ultraviolet at temperatures as low as 400°C. The employ of ultraviolet enhanced the crystallization of amorphous silicon. This method is able to uniformly crystallized large-area amorphous silicon films. The polysilicon films crystallized by this way are suitable for the fabrication of thin film transistors on ordinary glass. Crystallization process is performed in a furnace. Amorphous silicon sample is placed on a hot plate and irradiated by a bank of ultraviolet lamps through a diffuser plate to improve the uniformity of light that irradiates the sample. Raman microscopy is used for analyzing the qualities of UV-assisted crystallized silicon films. By measuring the Raman spectra the effects of anneal temperature and process time on the crystallizing behavior, crystallinity and grain size of the processed films were obtained. There has a threshold temperature for crystallization of amorphous silicon film in the presence of ultraviolet irradiation with certain intensity, i.e. by ultraviolet irradiation with certain intensity only when the temperature is up to the threshold temperature, the crystallization can be triggered. The threshold temperature is 400°C when the intensity of ultraviolet irradiation is 1mW/cm 2 . Above threshold temperature, the increase of anneal temperature increased the rate of crystallization. Crystallinity and grain size extracted from Raman spectra of samples increase with the extending of process time at certain temperature. Crystallization of amorphous silicon film with thickness of 50nm completed within 6 hours at 400°C irradiated by ultraviolet with intensity of 2mW/cm 2 .
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