High-quality In2O3 powder and ZnO powder had been used to make the ceramic target and the
atomic ratio of 1 to 1 of indium and zinc had been prepared in this study. The alloyed thin films had been
deposited on sapphire (001) substrates at different temperatures (100–600°C) by using pulsed laser
deposition (PLD) technique. An x-ray diffractometer and an atomic force microscope were used to
investigate the structural and morphological properties of the alloyed thin films. It was observed that the
alloyed thin films deposited at the temperatures lower than 300°C were amorphous, and the alloyed thin
films deposited at high temperatures were crystallized. A spectrophotometer was used to investigate the
transmittances of the alloyed thin films. It was found that the alloyed thin films were of high quality. The
band gap energies of the alloys were calculated by linear fitting the sharp absorption edges of the
transmittance spectra. The Hall measurements were also carried out to identify the electrical properties of
the thin films.
Pulsed laser deposition (PLD) technique is a very powerful method for fabricating various
oxide thin films due to its native merits. In this study, gallium and nitrogen co-doped ZnO thin films
(0.1 at.%) were deposited at different temperatures (100-600°C) on sapphire (001) substrates by using
PLD. X-ray diffractometer, atomic force microscope, spectrophotometer, and spectrometer were used
to characterize the structural, the morphological and the optical properties of the thin films. Hall
measurements were also carried out to identify the electrical properties of the thin films.
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