The use of an updated accelerator of the çÉ-12à neutron generator as a high-current implanter of hydrogen ions (protons and deuterons) with energies of 175-210 MeV into wafers made of crystalline silicon is described. The ion-beam scanning system used ensured nonuniformity in the irradiation of wafers with a diameter of 100 mm of <10%, which allowed the production of silicon-on-insulator wafers by the hydrogen splitting technique. The required particle fluence was ~10 17 cm -2 . A slight refinement of the setup allows wafers with diameters of up to 200 mm to be irradiated. The design features of the setup as they apply to different temperature conditions (down to a temperature close to that of liquid nitrogen) of the irradiation of 100-mm-diameter wafers are described.
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