A correlation between resistivities determined by electrical and optical methods suceeds for silicon epitaxial layers on undoped substrates. The magnitude of the deviations between these two resistivities is determined by the thickness and by the doping level of the layer. Thickness‐dependent calibration curves to evaluate dopant concentrations of the layer are obtained from the luminescence spectra and the electrical resistivities. Calibration curves of layers on undoped substrates show a double‐bended course in contrast to the situation of bulk Si. A simple model explains these experimental results.
The 4.2 K photoluminescence (PL) technique is applied to the qualitative and quantitative analysis of shallow impurities incorporated unintentionally in silicon epitaxial layers grown on undoped and B‐doped silicon substrates with a thickness between 30 and 155 μm. The P, As, and B com‐ponents of the PL spectra can be related to the layer in case of layers deposited on undoped sub‐strates.
Calibration curves to determine P, B, and A1 concentrations in silicon at 4.2 K from the intensity ratios of bound (BE) and free (FE) exciton related luminescence are presented. The integral relative intensities of the peaks are used besides the peak height ratios. By means of a large number of samples with widely varying concentrations it is shown that the influence of the compensation ratios of the samples on the determination of the dopant concentrations is smaller than the measurement errors. Integral intensity ratios of different BE phonon branches are also derived.Kalibrierungskurven zur Bestimmung der P-, B-und Al-Konzentrationen in Silizium bei 4,2 K aus den Verhaltnissen der Intensitaten der durch die Rekombination von gebundenen (BE) und freien (FE) Exzitonen verursachten Peaks des Spektrums werden vorgestellt. Neben den Peakhohenverhaltnissen werden auch die relativen integralen Verhaltnisse zur Kalibrierung benutzt. An Hand einer groDen Anzahl von Proben mit stark variierenden Konzentrationen wird gezeigt, daD der Kompensationsgrad der Proben keinen EinfluD auf die Bestimmung der Konzentrationen der flachen Storstellen hat. Integrale Intensitatsverhaltnisse der verschiedenen BE-Phononenzweige werden abgeleitet.
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