The electrochemical and photoelectrochemical behavior of surfaces of (100) n-GaAs and p-GaAs were studied in acid and alkaline solutions containing H202. Hydrogen peroxide shifted the flatband potential of p-GaAs, while it did not affect that of n-GaAs. The direction of the shift depended on the pH of the electrolyte: cathodically in acid and anodically in alkaline solution. The reduction of H202 in the dark and under illumination was studied by dark current and by photocurrent potential measurements. A mechanism for the decomposition of GaAs at the electrode/electrolyte interface was formulated.
H2O2 shifts the flatband potential of p‐GaAs to more cathodic values in acidic solution and to more anodic values in alkaline medium, while it does not affect the flatband potential of n‐GaAs.
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