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Abstruci -This paper presents a new 6.5GHz oscillator designed in a 0.5pm Silicon'On Sapphire CMOS technology. This new structure is based on the principle of frequency multiplication integrated in the same stage than the generator+ The layout particularities of it are presented in the case of a 8.5GHz fully integrated oscillator in the previous SOS technology that has an fT of 35GHz. Given measurements results prove the functionality of our design.

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Every high frequency circuits need inductors for proper work. This is more and more true w i t h new radio-frequency MOS transistors systems. But with t h e increase in frequency, lower inductors are required and MOS transistors offer less gain, Radio-frequency circuits i n MOS technology are also obedient to the layout of low inductance high quality factor inductors.It has been shown that t h e y can be better realized by microstrips. However, classical MOS digital technologies have no back ground plane under the substrate. This article analyzes the influence of parasitic back ground planes i n the case of an often used coplanar solution : coplanar waveguide.

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