The dielectric and electrical properties of sandwiched AlSnO2Al, AlSb2O3Al, and Al(SnO2 + Sb2O3)Al structures of different thicknesses are investigated. The ac. capacitance and tan δ increase with decrease in frequency in all these films. A comparison of the capacitance values of these films shows that the values of the capacitance are larger in mixed films as compared to the values of capacitance in SnO2 and Sb2O3 films. The variation of tan δ with frequency for mixed films lies between to that of SnO2 and Sb2O3 films. Currentvoltage characteristics of these films show that the breakdown voltage increases and the dielectric strength decreases with increase in film thickness in all the three types of films. The logarithm of breakdown field strength is plotted against the logarithm of the film thickness for the three types of films. Photomicrographs of the breakdown patterns at different stages of voltage are given and the results are explained.

I-V characteristics of sandwiched Al-(SnO, + SIi,O,)-AI Iiiixed films have been studied for different thicknesses. The current-voltage curves in general exhihit three regions, ohmic, non-ohmic and breakdown regions. The breakdown voltage increases and the dielectric strength decreases with increase of film thickness. The dc breakdown studies have been done and optical photonricrographs of breakdown patterns during different stages of dc voltage have been taken and the results are discussed.

I–V characteristics of sandwiched Al–Sb2O3–Al structures have been studied for different thicknesses. The current‐voltage curves in general exhibit three regions, ohmic, non ohmic and breakdown regions. The breakdown voltage increases whereas the dielectric strength decreases with increase in Sb2O3 film thickness. The electrical breakdown studies have been done for dc and ac voltages and optical photomicrographs of breakdown patterns during different stages of voltage have been taken and the results are explained.

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