The recently discovered phenomenon of potential sputtering, i.e., the efficient removal of neutral and ionized target particles from certain insulator surfaces due to the potential rather than the kinetic energy of impinging slow highly charged ions, has now also been observed for stoichiometric SiO 2 surfaces. Using a sensitive quartz crystal microbalance technique, total sputter yields induced by Ar q1 ͑q # 14͒ and Xe q1 ͑q # 27͒ ions have been determined for LiF and SiO 2 surfaces. The primary mechanisms for potential sputtering (defect mediated sputtering) and its considerable practical relevance for highly charged ion-induced surface modification of insulators are discussed. [S0031-9007(97)03627-2]
Electron emission number statistics have been measured for 8 keV H + ions in collisions with clean polycrystalline copper at 80 • and 67 • . Also, in a new development, electron number statistics have been recorded for reflected particles using coincidences between the reflected particles and the emitted electrons. The results of both coincidence and non-coincidence measurements fitted Polya distributions, with a higher mean emission value in the coincidence case. A model has been developed to interpret the difference between the coincidence and non-coincidence electron number statistics.
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