The temperature dependence of tunneling transition of the atomic particle in solids is studied near absolute zero. The different mechanisms of the temperature dependence are considered. They are the medium reorganization, the potential barrier parameters modulation, and the under-barrier friction The nonadiabatic effects are also considered. The rate constant K is described by formula ln K=ln K0+C4T4+C5T5+C6T6+C8T8 at low temperatures. It was conducted through the comparison of theory with the experimental data from the article of Kumada et al. [Chem. Phys. Lett. 261, 463 (1996)]. It turned out that good agreement takes place if one takes into account the quantum properties of the hydrogen crystal with the assumption of the dominated role of medium reorganization.
The Phillips and Van Vechten theory was applied to aluminum, gallium and indium pnictides (AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs and InSb). The values of the homopolar gap, ionic gap and Penn gap were evaluated for these binary semiconductors. The derived values of E h and E p were found to be in good agreement with the values obtained from the Phillips model and the Penn model. Electronic polarizability was investigated using the Chemla relation and the values were found to be in agreement with the results obtained from the Clausius-Mossotti relation. The Phillips ionicity ( f i ) was evaluated and the obtained values were compared with the values obtained from the Tubbs model and the Pauling ionicity model. The evaluated values of various ionicities were used to determine the microhardness (H), cohesive energy or total energy (E) and bulk modulus (B) of these materials. The values of these parameters thus obtained are in good agreement with previously reported experimental data and theoretical findings. PACS numbers: 71.15.Nc, 71.55.Eq 2. Theory Phillips [10, 11] and Van Vechten [12] have defined the Penn gap E p , homopolar gap E h and ionic gap E c for an elemental
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