A new W-structured type-II superlattice photodiode design, with graded band gap in the depletion region, is shown to strongly suppress dark currents due to tunneling and generation-recombination processes. The long-wave infrared (LWIR) devices display 19%–29% quantum efficiency and substantially reduced dark currents. The median dynamic impedance-area product of 216Ωcm2 for 33 devices with 10.5μm cutoff at 78K is comparable to that for state-of-the-art HgCdTe-based photodiodes. The sidewall resistivity of ≈70kΩcm for untreated mesas is also considerably higher than previous reports for passivated or unpassivated type-II LWIR photodiodes, apparently indicating self-passivation by the graded band gap.

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Single layer autonomous high-Tc dc superconducting quantum interference devices (SQUIDs) have been fabricated and tested. The SQUIDs were designed for application as a galvanometer. The current to be measured is injected directly in a microstrip segment of the SQUID loop. Step-edge as well as bicrystal YBCO Josephson junctions were used. We consider two aspects: (i) optimization of the noise properties with respect to current resolution, and (ii) temperature dependence of the period of voltage-flux relation. The SQUID inductance was calculated numerically taking into account the magnetic field penetration depth λ. The temperature dependence of λ(T) was obtained from experimental results and is found to be in good agreement with λ(T)≊λ(0)[1−(T/TC)2]−1/2.

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