In the present work, we were able to identify and characterize a new source of in-plane optical anisotropies (IOAs) occurring in asymmetric DQWs; namely a reduction of the symmetry from D 2d to C2v as imposed by asymmetry along the growth direction. We report on reflectance anisotropy spectroscopy (RAS) of double GaAs quantum wells (DQWs) structures coupled by a thin (< 2 nm) tunneling barrier. Two groups of DQWs systems were studied: one where both QWs have the same thickness (symmetric DQW) and another one where they have different thicknesses (asymmetric DQW). RAS measures the IOAs arising from the intermixing of the heavy-and light-holes in the valence band when the symmetry of the DQW system is lowered from D 2d to C2v. If the DQW is symmetric, residual IOAs stem from the asymmetry of the QW interfaces; for instance, associated to Ga segregation into the AlGaAs layer during the epitaxial growth process. In the case of an asymmetric DQW with QWs with different thicknesses, the AlGaAs layers (that are sources of anisotropies) are not distributed symmetrically at both sides of the tunneling barrier. Thus, the system losses its inversion symmetry yielding an increase of the RAS strength. The RAS line shapes were compared with reflectance spectra in order to assess the heavy-and light-hole mixing induced by the symmetry breakdown. The energies of the optical transitions were calculated by numerically solving the one-dimensional Schrödinger equation using a finite-differences method. Our results are useful for interpretation of the transitions occurring in both, symmetric and asymmetric DQWs. I.
Graphene nanoribbons (GNRs) are nanostructures considered to be promising building blocks for the realization of graphene-based devices. The optical properties of GNRs are hard to determine due to their nanoscopic dimensions. Reflectance Anisotropy Spectroscopy/Reflectance Difference Spectroscopy (RAS/RDS) is a powerful optical tool to characterize highly anisotropic structures. RAS/RDS has shown to be very useful to measure the optical response of materials including semiconductor heterostructures. The technique is non-destructive and can be used in air or in vacuum conditions. Considering the highly anisotropic geometry of the GNRs, the RAS/RDS becomes a quite convenient technique to characterize the optical properties of GNRs and in general to study the dependence on the thickness of the optical properties of graphene. The GNRs used in the present work were synthesized on 6H-SiC stepped substrates and annealed in air to obtain quasi-free-standing bilayer graphene (widths: 240 nm, 210, and 120 nm). For this system, the isolation of the optical signal coming from the GNRs in the RAS spectra is not an easy task due to the fact that both GNRs and the 6H-SiC stepped substrate are highly anisotropic. To study and characterize the GNRs, we present and discuss an experimental approach to isolate the RAS signal coming from the GNRs. We also have performed nano-RAS measurements by using a near-field scanning optical microscopy technique (nanometric resolution) that supports our method. We show that RAS and nano-RAS are powerful complementary optical probes that can be used to characterize GNRs and also properties such as the visual transparency of one-, two-, or few-layer thick graphene.
We report on differential reflectance contrast (DRC) sub-microscopic images measured of graphene layers exfoliated on a SiO2/Si substrate by using a near field scanning optical microscope (NSOM) with a spatial resolution of 40 nm. In general, high-quality mechanically exfoliated graphene flakes have sizes of some micrometers and exhibit a distribution of different thicknesses; thus an approach to characterize the topography of the flakes in the sub-micrometric regime is fundamental. DRC in the near field limit is a very useful technique to characterize the flakes in the sub-microscopic scale. The DRC signal is obtained by taking the numerical difference between the reflectivity coming from a region with no graphene (substrate) and a region containing a graphene layer. It is shown by a multiple reflection model (graphene/SiO2/Si) and spectroscopic ellipsometry measurements that the optical contrast in such system can be modulated by changing the thickness of the SiO2 layer or/and the wavelength of the incident light. The results open the possibility to use this optical technique for the thicknesses characterization in the sub-micrometer scale of 2D materials.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.