The velocities of screw and 60° dislocations in silicon are measured for temperatures ranging from 520 to 800 °C and stresses ranging from 4 to 30 MNm−2 and for various concentrations of phosphorous or boron atoms. n‐doping results in an increase of the velocities of screw and 60° dislocations. In moderately p‐doped Si, no clear effect is observed for screw dislocations while the velocities of 60° dislocations are slightly lower than in intrinsic Si. The effect of doping on the dislocation velocity is discussed mainly in terms of Haasen's calculation of the influence of the electrical charge carried by the dislocation on the formation of a double kink. In the case of 60° dislocations, the model fairly describes the measurements in heavily doped Si (≈ 1019 atoms cm−3) but underestimates the effect observed at moderate levels of doping.

The velocities of screw and 60"-dislocations in silicon have been measured for temperatures T between 580 and 800 "C and stresses t between 0.1 and 3 kp/mm2. The activation energy for the movement of 60°-dislocations &GO0 is stress-dependent in the whole stress range, that for screw dislocation Q, is constant f o r t 2 0.4 kp/mm2 and becomes also stress-dependent below 0.4 Irp/mm2. The current theories for kink motion do not yield a satisfactory description of the experimental results.Fur Temperaturen T zwischen 580 und 800 "C und Spannnngen t zwischen 0,l und 3 kp/mm2 wurden die Geschwindigkeiten von Schrauben-und 60°-Versetzungen in Silizium gemessen. Die Aktivierungsenergie fur die Bewegung von 60"-Versetzungen Qaoa ist spannungsabhangig im gesamten Spannungsbereich, fur Schraubenversetzungen ist &, konstant fur t 2 0,4 kp/mm2 und wird ebenfalls spannungsabhangig unterhalb von 0,4 kp/mm2. Die vorliegenden Theorien zur Kinkbewegung ergeben noch keine befriedigende Beschreibung der experimentellen Resultate.

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