Threshold switching has been observed and studied in thin films of NbOx (x?2) in the sandwich configuration and in a single-crystal device having both a gap and sandwich configuration. The recovery curve has been determined by measuring the reswitching voltage after a specific zero-voltage interruption time. Data indicate a maximum allowable interruption time of about 200 ns without a switch-off transition. This is interpreted as the distribution trapped-carrier lifetime for polycrystalline NbO2.

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By x‐ray and optical studies of thermally quenched products and by differential thermal analysis under pressure the effect of high pressure on the melting and polymerization of sulfur has been investigated to 31 kb and 500°C. At least four different liquid fields have been identified. DTA experiments indicate that pressure shifts the 159°C polymerization transition first toward higher temperatures and then toward lower temperatures until it finally coincides with the melting point at a pressure of about 0.7 kb. The depolymerization temperature was found by the same technique to increase with increasing pressure up to 0.4 kb. A liquid P—T boundary that may constitute the higher‐pressure extension to the depolymerization transition has been traced up to 7.5 kb and 480°C. A very sharp, practically temperature‐independent reaction in the liquid state has been located at about 9 kb extending from the liquidus to at least the limits of the apparatus at about 450°C. Evidence has been found for a possible second‐order phase transformation extending from about 10 kb at 400°C to the liquidus at approximately 360°C.

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