SiO2 films were deposited in a commercial single wafer parallel plate plasma deposition reactor using tetraethoxysilane as the silicon source. Deposition conditions were varied to produce films with widely differing properties. Electrical, optical, mechanical, and wet-etch-rate characterization were then used to investigate the as-deposited film quality. Moisture uptake was also measured and related to the initial properties. The films were studied in an ongoing investigation of silicon dioxide interlevel dielectric films used in multilevel ultra large scale integrated chip wiring. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.163.2.206 Downloaded on 2016-06-15 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.163.2.206 Downloaded on 2016-06-15 to IP

Reactive ion etching of silicon substrates in a plasma containing chlorinated species does not result in undercut of a permanent mask. When the silicon is very highly doped it behaves as a different material and undercut has been observed. This phenomenon will be discussed. For use in chlorinated plasmas, there is a choice of nonerodible masks that sputter slowly but will not be redeposited on the substrate surface. Both CCl4/Ar and Cl2/Ar plasmas will be described. The variation in etch rate of silicon with rf power, frequency, reactant concentration, reactant flow rate, gas presure, crystal orientation, and batch size will be presented. The possibilities of polymer formation and surface roughening will be discussed.

Anodic processing has been extended to aluminum alloy metallurgy. A procedure for forming completely planar interconnection metallization has been described. The factors which control line profile and the electrical isolation of closely spaced conductors have been investigated, and the conclusions used to define the anodizing conditions. The planar structure and the increased cross‐sectional area of the conductor which result from the use of this process make increased circuit density possible.

Mechanisms of silicon etching by CF4 plasma

Articles you may be interested inThe microstructure of submicrometer wide planar-reactive ion etched versus trench-damascene AlCu lines A process for improved Al(Cu) reactive ion etching Summary Abstract: Surface changes induced in Al/Cu/Si and photoresist films by reactive ion etching J. Vac. Sci. Technol. A 4, 749 (1986); 10.1116/1.573801 Summary Abstract: Reactive ion etching induced corrosion of Al and Al-Cu films

We have demonstrated that it is feasible to reactively ion etch (RIE) copper films.The etch rate is about an order of magnitude higher than the sputter etch rate.There is no undercut of an inert mask and the patterns formed have vertical sidewalls.

Studies of etch rates of sputtered SiO2 and single crystal silicon being reactively ion etched on a silica cathode in a CF4 plasma indicate that for SiO2 the etching process is dominated by an ion-assisted mechanism, whereas for silicon it is usually dominated by the neutral chemical component. It is therefore expected that, with a nonerodible mask, the etched profile for SiO2 is vertical, whereas that of silicon will usually be undercut and tapered. Scanning electron mierographs of patterns etched in SiO~ and silicon confirm the predictions.In reactive ion etching and sputter etching, the same rf glow discharge configuration is used. With the substrate holder acting as the cathode, ions generated in the dark space are accelerated across it and arrive at the cathode at normal incidence. The distinguishing feature of reactive ion etching is that the plasma contains chemically reactive species instead of or in addition to the inert gas used in sputter etching, and therefore the etch rate is significantly higher. Also, reactive ion etching is often much more selective than sputter etching.* Electrochemical Society Active Member. Key words: etching, sputtering, erosion.In reactive ion etching, since the ions are directional, a substrate on the cathode--i.e., coupled to the rf electrode---can be etched with a nonerodible mask 1 to produce vertical edges without undercutting the mask. This has been reported for SiO2 etched in CF4 with an aluminum mask (1) and for aluminum and its alloys etched in CC14 with a SiO2 mask (2). Reactive ion etching with a nonerodible mask results in residue formation. Portions of the substrate become masked

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