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Results are presented from the first theoretical study of the electronic properties of strained-layer semiconductor superlattices made from lattice mismatched materials. The energy gaps and electronic states of GaAs-GaAs0.2P0.8 (100) superlattices are studied as a function of layer thicknesses using a tight binding model. The superlattice band gaps are found to depend on the layer thicknesses through quantum mechanical effects and through the strains in the layers.

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