In this study, a very thin Ni/Au bilayer metal film was prepared by electron beam evaporation and thermal alloying to form ohmic contact on p-type GaN film. After thermal alloying, the currentvoltage (I-V) characteristic of Ni/Au contact on p-type GaN film exhibited ohmic behavior. The Ni/Au contacts showed a specific contact resistance of 1.7ϫ10 Ϫ2 ⍀ cm 2 at an alloying temperature of 450°C. In addition, the light transmittance of the Ni/Au ͑2 nm/6 nm͒ bilayer on p-type GaN was measured to be around 85% at 470 nm. These results suggest that a suitable metallization technology for the fabrication of light emitting devices can be achieved.
Most common contact metals show low thermal stabilities on ZnO and there is a clear need for more thermally stable metallization. The formation of rectifying contacts on n-type bulk single crystal ZnO using CrB2 was studied using current–voltage, scanning electron microscopy (SEM) and Auger Electron Spectroscopy (AES) measurements. When a single Au overlayer was used to reduce the metal sheet resistance, the contacts were ohmic for all annealing conditions. Under these conditions, both Zn and O were observed to outdiffuse from the ZnO. When a bilayer of Pt/Au was used on top of the CrB2 layers, rectifying contacts with barrier heights of ∼0.4 eV were obtained after annealing at 600°C, although at this condition the contact showed a reacted appearance and AES showed the onset of intermixing of the metallization. At higher anneal temperatures (700°C) the contact metallization showed blistering and loss of adhesion.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.