A new analytical model for carrier mobility in silicon is presented, which is strongly
oriented to CAD and suitable for implementation in device simulators. The effects of
the electric field, temperature, and doping concentration are accounted for. In particular,
the model unifies the descriptions of majority- and minority-carrier mobility and
includes the full temperature dependence. The effects of a high longitudinal field are
included in the conventional velocity-saturation form; the doping dependence is also
incorporated in the latter. The model has been worked out starting from a preliminary
investigation using a Boltzmann solver, and has been validated by a number of comparisons
with published experiments on silicon.
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