Zn0.99Mn0.01O
and Zn0.985(Mn0.01,Sb0.005)O
thin films were prepared on sapphire(0001) by reactive radio-frequency (rf) magnetron sputtering.
Zn0.99Mn0.01O
showed no obvious ferromagnetic behavior while
Zn0.985(Mn0.01, Sb0.005)O
exhibited robust ferromagnetic signals with a saturation magnetization of
0.92 μB/Mn2+,
and Zn0.985(Mn0.01, Sb0.005)O
film grown in an oxygen rich condition exhibited a larger saturation magnetization of
1.76 μB/Mn2+. The results are most consistent with the bound magnetic polaron model, in which
localized p-type defects mediate the ferromagnetic ordering.
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